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 APTGF300U120D
Single Switch with Series diodes NPT IGBT Power Module
EK E C
VCES = 1200V IC = 300A @ Tc = 80C
Application * Zero Current Switching resonant mode Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile
G
CK
E CK
C
EK G
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Max ratings 1200 400 300 800 20 2080 600A @ 1200V
Unit V A V W
APTGF300U120D - Rev 0 July, 2004
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
1-5
APTGF300U120D
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES VCE(on) VGE(th) IGES Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter on Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V, IC = 4mA Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 300A Tj = 125C VGE = VCE, IC = 12mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (125C) VGE = 15V VBus = 600V IC = 300A R G = 2 Min
1200
Typ 0.4 25 3.2 4
Max 6 3.9 6.5 1
Unit V mA V V A Unit nF
4.5
Dynamic Characteristics
Min
Typ 21 2.9 1.52 70 50 500 30 17 18
Max
ns
mJ
Series diode ratings and characteristics
Symbol Characteristic IF(A V) VF Qrr Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Charge
Test Conditions
50% duty cycle
Min Tc = 85C
Typ 250 2.2 2.4 2.2 13 40
Max 2.5
Unit A V C
IF = 300A IF = 400A IF = 400A IF = 300A
Tj = 150C Tj = 25C Tj = 125C
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode
Min
Typ
Max 0.06 0.13 150 125 100 5 3.5 280
Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
APT website - http://www.advancedpower.com
2-5
APTGF300U120D - Rev 0 July, 2004
2500 -40 -40 -40 3 2
APTGF300U120D
Package outline
APT website - http://www.advancedpower.com
3-5
APTGF300U120D - Rev 0 July, 2004
APTGF300U120D
Typical Performance Curve
Output characteristics (V GE=15V) 450 Ic, Collector current (A) Ic, Collector current (A) 400 350 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics
250s Pulse Test < 0.5% Duty cycle 250s Pulse Test < 0.5% Duty cycle
Output characteristics (VGE =10V) 350 300 250 200 150 100 50 0 4 0 1 2 3 V CE , Collector to Emitter Voltage (V) Gate Charge IC = 300A TJ = 25C VCE=600V 4 T J=125C
250s Pulse Test < 0.5% Duty cycle
T J=25C
TJ=25C
T J=125C
500 400 300 200 100 0 4
V GE, Gate to Emitter Voltage (V)
600 Ic, Collector Current (A)
20 16 12 8 4 0
0 500
VCE=800V
6 8 10 VGE, Gate to Emitter Voltage (V)
12
1000 1500 2000 Gate Charge (nC)
2500
1000
Switching times vs collector current
Capacitance vs Collector to Emitter Voltage
100
C, Capacitance (nF)
tdoff
VCE = 600V VGE=15V RG=2 TJ = 125C
Cies 10 Coes Cres
time (ns)
100
tdon tf
tr
10 0 100 200 300 Ic, Collector current (A) 400
1 0 10 20 30
VCE, Collector to Emitter Voltage (V) DC Collector Current vs Case Temperature 400 Ic, DC Collector Current (A) 350 300 250
Switching energy losses vs Gate resistance 120 Switching Energy losses (mJ)
100 80 60 40 20 0 0
VCE = 600V VGE=15V IC=300A TJ = 125C
Eon
Eoff
150 100 50 0 0 25 50 75 100 125 TC, Case Temperature (C) 150
2
4 6 8 10 12 Gate resistance (Ohms)
14
16
APT website - http://www.advancedpower.com
4-5
APTGF300U120D - Rev 0 July, 2004
200
APTGF300U120D
Minimum Switching Safe Operating A 700 IC, Collector current (A) 600 500 400 300 200 100 0 0 300 600 900 1200 1500 V CE , Collector to Emitter Voltage (V) 10 0 5 10 15 Gate resistance (Ohms) 20 1000 time (ns) tdon 100 tr tf 10000 VCE = 600V, VGE=15V IC =300A, TJ = 125C tdoff Switching times vs gate resistor
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 Thermal Impedance (C/W) 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 Single Pulse 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10
0 0.00001
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 50 100 150 200 250 300 350 IC, Collector Current (A) 400
Hard switching VCE = 800V D = 50% RG = 2 ZCS TJ = 125C TC = 75C ZCS
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
5-5
APTGF300U120D - Rev 0 July, 2004


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